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Mechanochemical Polishing of Silicon Carbide Single Crystal with Chromium(III) Oxide Abrasive
Author(s) -
Kikuchi Masao,
Takahashi Yutaka,
Suga Tadatomo,
Suzuki Shigenobu,
Bando Yoshio
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb05463.x
Subject(s) - polishing , materials science , abrasive , amorphous solid , silicon carbide , metallurgy , single crystal , carbide , composite material , crystallography , chemistry
In order to clarify the mechanism of mechanochemical polishing of SiC with Cr 2 O 3 abrasive, 6H‐wurtzite single‐crystal specimens were dry‐polished. A significant anisotropic polishing rate difference was found between Si(0001) and C(000 1 ) surfaces. The C(000 1 ) surface was removed 10 times as fast. Polished surfaces were observed from cross‐sectional and plan‐view directions by high‐voltage TEM. There was no trace of mechanical effects such as residual strain or scratches. The polishing debris was analyzed by X‐ray diffraction, high‐resolution TEM, and analytical TEM. No crystalline phases were identified from X‐ray diffraction patterns except for Cr 2 O 3 , while it was found from TEM observation that a large amount of an amorphous phase consisting of Si, C, and O was contained in the debris. These results indicated that the surface of SiC was removed mechanochemically by the aid of a catalytic oxidation effect of Cr 2 O 3 .