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Semiconductive Property and Impedance Spectra of Alumina–Silicon Carbide Whisker Composite
Author(s) -
Zhang Jinsong,
Huang Hua,
Cao Lihua,
Xia Fei,
Li Guangqiang
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb04497.x
Subject(s) - silicon carbide , materials science , whisker , composite material , composite number , electrical reactance , volume fraction , electrical impedance , capacitive sensing , electrode , voltage , electrical engineering , inductance , chemistry , engineering
The room‐ and high‐temperature resistances and impedance spectra of Al 2 O 3 –SiC( w ) composites made by a sol–gel process were measured by the common dual‐electrode method and frequency response analysis. The experimental results show that the composites have semiconductive properties and that there is a dual nature of the inductive and capacitive reactance as the SiC( w ) content becomes greater than a critical volume fraction.