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Low‐Pressure Chemical Vapor Deposition of α‐Si 3 N 4 from SiF 4 and NH 3 : Kinetic Characteristics
Author(s) -
Lee Woo Y.,
Strife James R.,
Veltri Richard D.
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb04484.x
Subject(s) - deposition (geology) , chemical vapor deposition , analytical chemistry (journal) , decomposition , chemistry , volumetric flow rate , atmospheric temperature range , kinetic energy , materials science , mineralogy , thermodynamics , geology , environmental chemistry , paleontology , physics , organic chemistry , quantum mechanics , sediment
Deposition of α‐Si 3 N 4 from SiF 4 and NH 3 was systematically studied using an axisymmetric, vertical hot‐wall reactor in the temperature range of 1340° to 1490°C. The relationship between process variables and deposition behavior was identified. The deposition process was most strongly influenced by temperature. In general, deposition rate increased exponentially with increased deposition temperature, although reagent depletion in the axial direction caused a rapid decrease in the deposition rate. The deposition rate increased moderately with increased flow rate or decreased NH 3 /SiF 4 molar ratio. The decomposition characteristic of pure NH 3 and SiF 4 were studied utilizing mass spectroscopy and compared to thermodynamic predictions in order to assess their influences on the Si 3 N 4 deposition process. Finally, the crystallography of Si 3 N 4 deposits was correlated as a function of temperature and deposition rate.