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Oxidation of Sintered Aluminum Nitride at Near‐Ambient Temperatures
Author(s) -
Dutta I.,
Mitra S.,
Rabenberg L.
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb04403.x
Subject(s) - materials science , foil method , transmission electron microscopy , nitride , oxide , aluminium , epitaxy , metallurgy , chemical engineering , composite material , nanotechnology , layer (electronics) , engineering
Oxidation of sintered aluminum nitride at low temperatures (20°–200°C) was studied using transmission electron microscopy (TEM). Particles of α‐Al 2 O 3 , about 20–30 Å in size, were found to form within minutes on freshly cleaned surfaces of AlN at room temperature. The oxide was found to grow nearly epitaxially on AlN when the {0001} AlN planes were exposed to the surface. Limited nonepitaxial oxidation was also observed when the basal planes were inclined to the TEM foil surface. After 10 h in air at 75°C, the particles coarsened to about 50 Å, while after 150 h at 200°C, an oxide film, about 500 Å thick, was observed on some grains.