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Nitridation of Silicon Containing MgO and CeO 2 Powders and SiC Whiskers
Author(s) -
Huang JowLay,
Simms Frederick E.
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb04241.x
Subject(s) - whiskers , whisker , materials science , sintering , monocrystalline whisker , nitriding , silicon , dopant , doping , silicon carbide , chemical engineering , decomposition , metallurgy , mineralogy , nanotechnology , composite material , optoelectronics , chemistry , layer (electronics) , organic chemistry , engineering
Processing and nitridation of MgO/CeO 2 ‐doped silicon containing SiC whiskers was studied. The reaction time was dramatically reduced by incorporating MgO/CeO 2 dopants and SiC whiskers in silicon powders prior to nitridation. The decomposition of SiC whiskers depends on the nitriding temperature, sintering aids, and whisker surface composition.