Premium
Reactions of Silicon Carbide and Silicon(IV) Oxide at Elevated Temperatures
Author(s) -
Jacobson Nathan S.,
Lee Kang N.,
Fox Dennis S.
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb04232.x
Subject(s) - silicon carbide , stoichiometry , materials science , silicon , atmospheric temperature range , carbon fibers , silicon oxide , carbide , analytical chemistry (journal) , knudsen number , oxide , chemical engineering , chemistry , composite material , metallurgy , thermodynamics , composite number , silicon nitride , physics , chromatography , engineering
The reaction between SiC and SiO 2 has been studied in the temperature range 1400–1600 K. A Knudsen cell in conjunction with a vacuum microbalance and a high‐temperature mass spectrometer was used for this study. Two systems were studied—1:1 SiC (2 wt% excess carbon) and SiO 2 ; and 1:1:1 SiC, carbon, and SiO 2 . In both cases the excess carbon forms additional SiC within the Knudsen cell and adjusts to the direct reaction of stoichiometric SiC and SiO 2 to form SiO( g ) and CO( g ) in approximately a 3:1 ratio. These results are interpreted in terms of the SiC‐O stability diagram.