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Delayed‐Failure Resistance of High‐Purity Si 3 N 4 at 1400°C
Author(s) -
Tanaka Isao,
Pezzotti Giuseppe
Publication year - 1992
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1992.tb04180.x
Subject(s) - materials science , creep , grain size , analytical chemistry (journal) , strain (injury) , composite material , metallurgy , chemistry , chromatography , medicine
Delayed failure and creep behavior of high‐purity Si 3 N 4 sintered without additives with a mean grain size of 1 μm has been measured at 1400°C. Lifetime under 300 MPa was >240 h, which showed good agreement with the value predicted in our previous report. Creep strain rate ranged from 1 × 10 −5 to 3 × 10 −5 h −1 between 200 and 360 MPa. These values demonstrate the excellent potential of high‐purity Si 3 N 4 materials for structural application up to 1400°C.