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Preparation of PbZrO 3 –PbTiO 3 Ferroelectric Thin Films by the Sol–Gel Process
Author(s) -
Tohge Noboru,
Takahashi Satoshi,
Minami Tsutomu
Publication year - 1991
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1991.tb07298.x
Subject(s) - ferroelectricity , materials science , dielectric , coercivity , sol gel , thin film , crystallization , perovskite (structure) , analytical chemistry (journal) , acetylacetone , hysteresis , dielectric loss , mineralogy , crystallography , chemical engineering , inorganic chemistry , chemistry , nanotechnology , condensed matter physics , physics , optoelectronics , chromatography , engineering
Ferroelectric films, PbZr x Ti 1− x O 3 ( x = 0 to 0.6), have been prepared from corresponding metal alkoxides partially stabilized with acetylacetone through the sol‐gel process. The films dip‐coated in an ambient atmosphere were heat‐treated at 400°C for decomposition of residual organics and then at temperatures between 500° and 700°C for crystallization of the films. The perovskite phase precipitated at temperatures above 560°C, accompanied by an increase in dielectric constant. The dielectric constant of the films, which was comparable with that of sintered bodies, showed a maximum (∼620) at around x = 0.52 in PbZr x Ti 1− x O 3 . These films showed D – E hysteresis, with slightly higher values of coercive field, compared with those of sintered bodies.