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Effect of Microwave Power on Hydrogen Content in Chemically Vapor Deposited Diamond Films
Author(s) -
Hirai Hisako,
Fukunaga Osamu,
Odawara Osamu
Publication year - 1991
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1991.tb07169.x
Subject(s) - diamond , chemical vapor deposition , hydrogen , raman spectroscopy , carbon fibers , amorphous solid , amorphous carbon , microwave , materials science , analytical chemistry (journal) , ion source , carbon film , diamond like carbon , substrate (aquarium) , chemistry , thin film , ion , nanotechnology , composite number , optics , composite material , crystallography , organic chemistry , physics , oceanography , quantum mechanics , geology
The effect of microwave power on the hydrogen and amorphous carbon contents of diamond films is investigated by the plasma chemical vapor deposition method. The input microwave power during diamond synthesis is varied between 330 and 500 W by using different holder materials, while a constant substrate temperature of 850°C is maintained. The hydrogen content in the synthesized diamond is measured by secondary ion mass spectrometry, and the relative amount of amorphous carbon is estimated from the Raman spectra. The hydrogen count normalized against that of carbon decreases logarithmically with increasing input power; the amorphous carbon amount also decreases with higher input power. The present experimental results prove that hydrogen content can be controlled by varying input microwave power during diamond deposition.