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Chemical Vapor Deposition of CuO x Films by Cul and O 2 : Role of Cluster Formation on Film Morphology
Author(s) -
Hong LuSheng,
Komiyama Hiroshi
Publication year - 1991
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1991.tb07145.x
Subject(s) - nucleation , chemical vapor deposition , deposition (geology) , cluster (spacecraft) , diffusion , materials science , porosity , homogeneous , chemical engineering , morphology (biology) , analytical chemistry (journal) , mineralogy , chemistry , nanotechnology , composite material , thermodynamics , chromatography , paleontology , programming language , physics , genetics , organic chemistry , sediment , computer science , engineering , biology
CuO x films were deposited on silica substrates by the chemical vapor deposition (CVD) method, using CuI and O 2 as source gases at low pressure in a tubular reactor. The growth mechanism to obtain a dense and uniformly distributed (in the axial direction in a tubular reactor) film was investigated. It was found that the occurrence of homogenous nucleation caused an abrupt increase of deposition rate and made the film porous. Homogeneous nucleation can be prevented by properly selecting reactant concentration, reactor temperature, and reactor diameter. Based on an aerosol diffusion theory from laminar pipe flow, a method of predicting cluster size in this CVD reaction system was proposed. The result showed that the clusters formed by homogeneous nucleation had an average size of about 1 nm in diameter.