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Plasma Etching of α‐Sialon Ceramics
Author(s) -
Mitomo Mamoru,
Sato Yohichiro,
Ayuzawa Nobuo,
Yashima Isamu
Publication year - 1991
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1991.tb06940.x
Subject(s) - sialon , etching (microfabrication) , materials science , ceramic , mineralogy , phase (matter) , plasma etching , plasma , analytical chemistry (journal) , composite material , chemistry , layer (electronics) , physics , organic chemistry , quantum mechanics , chromatography
Plasma etching of β‐Si 3 N 4 , α‐sialon/β‐Si 3 N 4 and α‐sialon ceramics were performed with hydrogen glow plasma at 600°C for 10 h. The preferential etching of β‐Si 3 N 4 grains was observed. The etching rate of α‐sialon grains and of the grain‐boundary glassy phase was distinctly lower than that of β‐Si 3 N 4 grains. The size, shape, and distribution of β‐Si 3 N 4 grains in the α‐sialon/β‐Si 3 N 4 composite ceramics were revealed by the present method.