Premium
Etching of Silicon Carbide Materials at Elevated Temperatures in a Nitrogen‐Based Gas
Author(s) -
Butt Darryl P.,
Tressler Richard E.,
Spear Karl E.
Publication year - 1991
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1991.tb06910.x
Subject(s) - etching (microfabrication) , nitrogen gas , silicon carbide , materials science , nitrogen , gas pressure , carbide , chemical engineering , composite material , chemistry , organic chemistry , layer (electronics) , petroleum engineering , engineering
Two sintered SiC‐based materials were heat‐treated for 150 h at 1300°C in a nitrogen‐based gas (1.2% H 2 , 0.6% CO) at a total pressure of 130 Pa. Sintered SiC samples were also preoxidized and then exposed to this gas under the same conditions to evaluate the protective nature of an SiO 2 scale. In this atmosphere, SiO gas and cyanogens are predicted to form, rather than SiO 2 . Experimental studies confirmed that etching of sintered SiC occurs. Preoxidation does not provide protection from etching, because of the rapid removal of SiO 2 by H 2 as H 2 O and SiO.