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Isothermal Capacitance Transient Spectroscopy of Grain‐Boundary Interfacial States in Beryllium Oxide‐Doped Silicon Carbide Ceramics
Author(s) -
Tanaka Shigeru,
Takahashi Ken,
Suzuki Yasutaka,
Akita Chiyoshi,
Ohashi Naoki,
Haneda Hajime,
Tanaka Junzo
Publication year - 1991
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1991.tb06820.x
Subject(s) - grain boundary , materials science , silicon carbide , ceramic , beryllium oxide , isothermal process , capacitance , condensed matter physics , doping , grain boundary diffusion coefficient , composite material , analytical chemistry (journal) , beryllium , optoelectronics , microstructure , thermodynamics , chemistry , electrode , physics , organic chemistry , chromatography
Grain boundaries of SiC ceramics doped with 2 wt% BeO were investigated using isothermal capacitance transient spectroscopy (ICTS). ICTS signals were observed above 433 K and the resulting capacitance‐time curves (under bias and zero bias) were ascribed to interfacial states at the grain boundaries. The signals were sharp compared to those of the SrTiO 3 ─Bi 2 O 3 system, suggesting that the structural disorder of grain boundaries in the SiC─BeO system was relatively small. It was determined that the interfacial state was located 0.92 eV above the valence band.