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Simultaneous Chemical Vapor Deposition of Boron Nitride and Aluminum Nitride
Author(s) -
Lee Woo Y.,
Lackey W. J.,
Agrawal P. K.,
Freeman Garth B.
Publication year - 1991
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1991.tb06814.x
Subject(s) - chemical vapor deposition , whiskers , boron nitride , materials science , nitride , microstructure , deposition (geology) , boron , composite number , aluminium , whisker , chemical engineering , composite material , chemistry , nanotechnology , layer (electronics) , organic chemistry , paleontology , sediment , biology , engineering
Two chemically different phases, hexagonal BN and AIN, were simultaneously produced by chemical vapor deposition (CVD) using an impinging jet reactor and the BCl 3 ─AlCl 3 ─NH 3 ─Ar reagent system. The microstructure of the BN + AIN composite coatings was strongly dependent on temperature, pressure, and BCl 3 and AlCl 3 concentrations. The growth characteristics of BN and AIN in the codeposition system were similar to those expected from the single‐phase deposition processes (i.e., BN‐CVD and AIN‐CVD), except the growth of AIN whiskers was accentuated, and competition between BN and AIN deposition in the composites was suspected to be the cause of less‐crystalline deposits. In both BN + AIN‐CVD and AIN‐CVD, the growth of AIN whiskers became more apparent with increasing pressure or temperature. The codeposition behavior observed experimentally was compared with thermodynamic predictions.