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Steady‐State Creep Behavior of Si–SiC C‐Rings
Author(s) -
Chuang Tzejer,
Liu Weijun,
Wiederhorn Sheldon M.
Publication year - 1991
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1991.tb06795.x
Subject(s) - creep , materials science , silicon carbide , composite material , stress (linguistics) , micrography , structural engineering , scanning electron microscope , philosophy , linguistics , engineering
Because of the ease of experimental setup as well as economics in sample preparation, C‐ring specimens are sometimes chosen for the evaluation of mechanical behavior. In this paper, the long‐term creep of siliconized silicon carbide (Si–SiC) C‐rings is investigated. Creep tests on a number of Si–SiC C‐rings were carried out under constant compressive loads at 1300°C in air. Load‐point displacements were continually monitored as a function of time, thereby establishing the steady‐state regime as a function of load and ring geometry. Optical micrography on the postcrept specimens was performed to obtain damage zone sizes. A simple curved beam theory was employed to analyze the stress state developed throughout the body during steady‐state creep. Loadpoint displacement rates were numerically calculated using both geometric and energy methods. Observed damage zone sizes and shapes within the specimen agreed with those predicted theoretically. Results obtained on the stress solutions are useful as local loading parameters in the study of high‐temperture fracture behavior of a cracked C‐ring.