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Inversion Domains in Aluminum Nitride
Author(s) -
Berger Axel
Publication year - 1991
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1991.tb04359.x
Subject(s) - nucleation , inversion (geology) , planar , materials science , nitride , electron diffraction , crystallography , diffraction , impurity , grain boundary , crystal growth , condensed matter physics , optics , chemistry , microstructure , nanotechnology , geology , composite material , physics , paleontology , computer graphics (images) , organic chemistry , layer (electronics) , structural basin , computer science
Flat and curved, basal and nonbasal planar defects are frequently observed in sintered AIN ceramics. To prove the existence of inversion domains, TEM techniques sensitive to crystal polarity were used. Dark‐field imaging in certain multiple‐beam situations with g = (0002) (where g is operating reflection) yielded strong domain contrast giving clear evidence of an inverted crystal structure within the domains. This was confirmed by the dynamic contrast in the disks of convergent‐beam electron diffraction. All planar defects observed were found to be associated with inversion domains. The formation of inversion twins may be nucleated by accidental growth or by nucleation and growth within the bulk of a preexisting AIN grain. Both mechanisms are supposed to be associated with the accommodation of impurities.