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Some New Perspectives on Oxidation of Silicon Carbide and Silicon Nitride
Author(s) -
Luthra Krishan L.
Publication year - 1991
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1991.tb04348.x
Subject(s) - silicon nitride , silicon carbide , silicon , diffusion , materials science , silicon monoxide , partial pressure , carbon monoxide , locos , carbide , nitride , oxygen , chemical engineering , nitrogen , inorganic chemistry , chemistry , nanotechnology , metallurgy , catalysis , thermodynamics , organic chemistry , layer (electronics) , physics , engineering
This study provides new perspectives on why the oxidation rates of silicon carbide and silicon nitride are lower than those of silicon and on the conditions under which gas bubbles can form on them. The effects on oxidation of various rate‐limiting steps are evaluated by considering the partial pressure gradients of various species, such as O 2 , CO, and N 2 . Also calculated are the parabolic rate constants for the situations when the rates are controlled by oxygen and/or carbon monoxide (or nitrogen) diffusion. These considerations indicate that the oxidation of silicon carbide and silicon nitride should be mixed controlled, influenced both by an interface reaction and diffusion.