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Selectivity of Silicon Carbide/Stainless Steel Solid‐State Reactions and Discontinuous Decomposition of Silicon Carbide
Author(s) -
Chou Ting C.,
Joshi Anne
Publication year - 1991
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1991.tb04113.x
Subject(s) - materials science , carbide , precipitation , grain boundary , silicon carbide , carbon fibers , diffusion , metallurgy , silicon , metal , chemical engineering , microstructure , composite material , thermodynamics , physics , meteorology , composite number , engineering
Solid‐state reactions of SiC with a multicomponent system, stainless steel, have been studied at 1125°C. Four‐layered reaction products consisting of modulated carbon precipitation zone, random carbon precipitation zone, four‐phase mixture zone, and grain‐boundary precipitation zone were formed in the reaction zone. The carbon precipitates were embedded in a matrix of complex metal silicides. In addition, extensive interfacial melting was noted. Carbon atom was found to diffuse faster than Si and selectively reacted with Cr to form Cr carbide(s) along the grain boundaries of stainless steel. No Fe carbides or Ni carbides were ever detected. Among the consituents existing in stainless steel, Ni atoms have the highest affinity for Si. An uphill diffusion of Ni toward the SiC reaction front was observed. While the diffusion of Cr and Fe toward SiC followed a downhill concentration gradient, very small amounts of Cr reached the SiC interface. The selective reactions of Si and C with Ni, Fe, and Cr are discussed on the basis of Gibbs free energy of formation of various compounds. The diffusion kinetics of C and Si atoms in selected metal/SiC reactions are discussed on the basis of their chemical affinities for respective metals. The modulation of carbon precipitation is correlated with previous results from Ni/SiC, Ni 3 Al/SiC, Fe/SiC, Co/SiC, and Pt/SiC, reactions. A general model describing discontinuous decomposition of SiC is proposed to explain the origin of carbon modulation.