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Active‐to‐Passive Transition in the Oxidation of Silicon Carbide and Silicon Nitride in Air
Author(s) -
Vaughn Wallace L.,
Maahs Howard G.
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb09793.x
Subject(s) - silicon carbide , oxygen , materials science , silicon , inert gas , silicon nitride , partial pressure , transition temperature , analytical chemistry (journal) , nitride , inert , transition point , thermodynamics , chemistry , condensed matter physics , metallurgy , composite material , superconductivity , organic chemistry , physics , layer (electronics)
The active‐to‐passive transition in the oxidation of SiC and Si 3 N 4 was determined in a flowing air environment as a function of temperature and total pressure. The experimentally observed transition temperatures ranged from a low of 1347°C to a high of 1543°C for partial pressures of oxygen of 2.5 and 123.2 Pa, respectively. The SiC and Si 3 N 4 samples had approximately the same transition point for a given pressure. In general, the higher the flow rate, the higher the transition temperature for a given pressure. The transitions for SiC measured in this study agree with previous data for the transition of SiC measured in pure oxygen at reduced pressures and in oxygen inert gas mixtures.