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Contribution to the Phase Diagram Al 4 C 3 ‐AIN‐SiC
Author(s) -
Oden Laurance L.,
McCune R. A.
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb09791.x
Subject(s) - phase diagram , impurity , diffraction , materials science , x ray crystallography , phase (matter) , ternary operation , thermal analysis , crystallography , base (topology) , powder diffraction , thermal , analytical chemistry (journal) , chemistry , thermodynamics , optics , mathematics , physics , organic chemistry , programming language , mathematical analysis , chromatography , computer science
Compositions on the join A1 4 C 3 ·2AIN‐A1 4 C 3 .2SiC were investigated using X‐ray diffraction and thermal analysis of hot‐pressed bodies prepared from materials of various purities. The quaternary phase A1 4 C 3 · AIN · SiC was observed in samples prepared from the high‐purity elements, but the ternary phases A1 4 C 3 ·2AIN and A1 4 C 3 ·2SiC were observed only in samples containing significant impurities. A projection onto the base triangle at 1860°C for the pseudoternary system Al 4 C 3 ‐AlN‐SiC was constructed using X‐ray diffraction, thermal analysis, and existing information in the literature.