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Low‐Temperature Metal‐Organic Chemical Vapor Deposition of Silicon Nitride
Author(s) -
Du Honghua,
Gallois Bernard,
Gonsalves Kenneth E.
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb06590.x
Subject(s) - auger electron spectroscopy , chemical vapor deposition , silicon nitride , materials science , fourier transform infrared spectroscopy , silicon , infrared spectroscopy , analytical chemistry (journal) , nitride , amorphous solid , ellipsometry , plasma enhanced chemical vapor deposition , deposition (geology) , inorganic chemistry , thin film , chemical engineering , chemistry , crystallography , nanotechnology , optoelectronics , organic chemistry , layer (electronics) , sediment , nuclear physics , engineering , biology , paleontology , physics
Amorphous silicon nitride films have been deposited on single‐crystal silicon from the gas mixture of methylsilazane and ammonia at 873 to 1073 K. The films have been characterized by ellipsometry, Fourier transform infrared spectroscopy, and Auger electron spectroscopy. The Si‐C, Si‐H, and C‐H bonds in methylsilazane can be effectively cleaved and the associated C and H species removed. The structure and composition of the films do not show any apparent dependence on the deposition temperature.