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Analysis of the Pyrolysis Products of Dimethyldichlorosilane in the Chemical Vapor Deposition of Silicon Carbide in Argon
Author(s) -
Cagliostro Domenick E.,
Riccitiello Salvatore R.,
Carswell Marty G.
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb06560.x
Subject(s) - trichlorosilane , silicon tetrachloride , dichlorosilane , silicon carbide , chemical vapor deposition , silicon , hydrogen chloride , hydrogen , inorganic chemistry , chemistry , impurity , argon , pyrolysis , chemical engineering , chlorine , methane , materials science , organic chemistry , engineering
A study of the products and reactions occurring during the chemical vapor deposition of silicon carbide from dimethyl‐dichlorosilane in argon is presented. Reaction conditions were as follows: 700° to 1100°C, a contact time of ∽1 min, and a pressure of 1 atm (∽0.1 MPa). At these conditions, the gases that formed were mainly methane, hydrogen, silicon tetrachloride, trichlorosilane, and methyltrichlorosilane. Hydrogen chloride might also be present, but was not determined. The silicon carbide solid that formed showed the presence of hydrogen and chlorine as impurities, which might degrade the silicon carbide properties. These impurities were eliminated slowly, even at 1100°C, forming hydrogen, trichlorosilane, and silicon tetrachloride.