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Bonding Mechanisms in Silicon Nitride Brazing
Author(s) -
Loehman Ronald E.,
Tomsia Antoni P.,
Pask Joseph A.,
Johnson Sylvia M.
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb06552.x
Subject(s) - brazing , wetting , materials science , sessile drop technique , tin , microstructure , titanium , metallurgy , silicon , silicon nitride , titanium nitride , layer (electronics) , nitride , composite material , alloy
We investigated the wetting behavior and reactions of different metals on Si 3 N 4 using sessile drop measurements, analysis of reaction layers, and measurements of strengths of joined bars. Active metals, such as Al and Ti, and alloys that contain them react with Si 3 N 4 and cause wetting and spreading at the interface. Al‐Si 3 N 4 reaction at 900°C produced a thin layer of Al 2 O 3 at the interface. Reaction between Si 3 N 4 and Ag‐Cu‐To braze alloys at 900°C resulted in a complex microstructure in the reaction zone that contained TiN and titanium silicides. Breaking strengths of Si 3 N 4 bars joined with the Ag‐Cu‐Ti braze alloys were higher than those for Si 3 N 4 joined with Al, primarily because of the better wetting by the Ag‐Cu‐Ti alloys. Nonreactive metals and alloys such as Sn, In, Ag‐Cu, and Ag‐Cu‐Sn neither wet, spread, nor adhere to Si 3 N 4 substrates.