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Semiconductor Passivation and Insulation Properties for Hydroxyl‐ and Fluoride‐Free ZnO‐SiO 2 ‐B 2 O 3 ‐Al 2 O 3 Glasses Stabilized by Increased P 2 O 5
Author(s) -
Kobayashi Keiji
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb06484.x
Subject(s) - passivation , materials science , capacitor , semiconductor , capacitance , analytical chemistry (journal) , thermal expansion , oxide , mineralogy , metallurgy , voltage , composite material , optoelectronics , electrical engineering , electrode , chemistry , layer (electronics) , engineering , chromatography
F − ‐ and OH − ‐free ZnO‐B 2 O 3 ‐SiO 2 ‐Al 2 O 3 ‐P 2 O 5 glasses used for semiconductor‐device passivation or insulation are investigated with regard to compositional dependencies for thermal expansion, viscosity points, and metal oxide semiconductor (MOS) capacitor properties. The experimental data show that thermal expansion increases, and flow points decrease, when P 2 O 5 is substituted for B 2 O 3 . MOS capacitors passivated by OH − ‐ and F − ‐free ZnO‐based glasses exhibit normal capacitance‐voltage curves.