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Measurement of Stresses Using Fluorescence in an Optical Microprobe: Stresses around Indentations in a Chromium‐Doped Sapphire
Author(s) -
Molis Steven E.,
Clarke David R.
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb06435.x
Subject(s) - microprobe , sapphire , materials science , indentation , doping , stress (linguistics) , chromium , stress field , raman spectroscopy , mineralogy , optics , luminescence , composite material , analytical chemistry (journal) , laser , metallurgy , optoelectronics , chemistry , linguistics , physics , philosophy , chromatography , finite element method , thermodynamics
A technique for measuring stress (positive and negative) with a lateral spatial extent of approximately 2 μm is introduced. The technique, implemented using a Raman microprobe, is demonstrated with measurements of the frequency shift of the sharp, R‐luminescence lines (2Ā and Ē to 4 A 2 radiative transitions) in, and around, a hardness indentation in a 0.06‐wt%‐chromium doped sapphire. From the observed frequency shifts the stresses in regions sampled in the hardness impression, in the complex stress field surrounding it, and at the tip of a crack are measured.