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Subcritical Crack Growth in Sintered Silicon Nitride Exhibiting a Rising R‐Curve
Author(s) -
Okada Akira,
Hirosaki Naoto,
Yoshimura Masahiro
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb05274.x
Subject(s) - silicon nitride , materials science , nitride , stress intensity factor , silicon , composite material , growth velocity , crack closure , intensity (physics) , metallurgy , fracture mechanics , optics , layer (electronics) , medicine , physics , endocrinology
Subscritical crack growth of sintered silicon nitride was analyzed in terms of the R ‐curve. Provided that the stress intensity at the crack tip governs the subcritical crack‐growth velocity, the K I – V relationship of sintered silicon nitride exhibiting a rising R ‐curve is shown to shift to the high‐ K I region as the crack advances.