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Microstructure Development in RuO 2 ‐Glass Thick‐Film Resistors and Its Effect on the Electrical Resistivity
Author(s) -
Yamaguchi Takashi,
Iizuka Kazuhiko
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb05251.x
Subject(s) - microstructure , materials science , electrical resistivity and conductivity , resistor , coalescence (physics) , composite material , mineralogy , chemistry , electrical engineering , physics , voltage , astrobiology , engineering
Microstructure development in RuO 2 ‐glass thick‐film resistors has been studied by optical microscopy with special emphasis on the effect of glass particle size and mixing and firing conditions. The microstructure development has been characterized by the coalescence of glass grains, infiltration of glass into RuO 2 particle aggregates, and agglomeration of RuO 2 particles. The resistivity‐firing temperature relationship has been correlated with the microstructure development.