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Glass–Crystal Transition in II‐IV‐V 2 Semiconducting Compounds
Author(s) -
Hong Kug Sun,
Berta Yolande,
Speyer Robert F.
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb05204.x
Subject(s) - crystallization , amorphous solid , materials science , supercooling , glass transition , crystallography , amorphous metal , germanium , thermodynamics , chemistry , metallurgy , polymer , physics , composite material , silicon
The crystallization behavior of amorphous CdGe x As 2 , where the x values were varied from 0 to 1.2, was studied in order to document the effect of germanium on the amorphous structure. The glass‐forming tendency of amorphous CdGe x As 2 was evaluated by Hruby's criterion. The crystallization mechanism of each group was proposed, interpreting DSC, XRD, EDS, and TEM data, interactively. The crystallization behavior appeared as two distinct groups: those based on the CdAs 2 structure and those on the CdGeAs 2 structure (chalcopyrite), depending on Ge content. Ge atoms were found to suppress a glass‐to‐glass exothermic transformation to higher temperatures in the CdAs 2 group, and crystallization in both groups. Proposed models of amorphous structure from previous investigators, measuring the radial distribution function, magnetic susceptibility, and macroscopic density, were correlated to the crystallization studies herein. A model of the transformation of glass structure with increasing Ge content from a CdAs 2 to a CdGeAs 2 ‐like structure was established by extrapolation of experimental results indicating this behavior in crystalline CdGe x As 2 compounds with varying x .