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Electrical Properties of Gallium‐Doped Zinc Oxide Films Prepared by RF Sputtering
Author(s) -
Choi Byung Ho,
Im Ho Bin,
Song Jin Soo
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb05203.x
Subject(s) - gallium , sputtering , materials science , doping , electrical resistivity and conductivity , band gap , analytical chemistry (journal) , zinc , argon , thin film , optoelectronics , metallurgy , nanotechnology , chemistry , engineering , organic chemistry , chromatography , electrical engineering
Ga‐doped polycrystalline ZnO films on glass substrates were prepared by sputtering the targets, which had been prepared by sintering disks consisting of ZnO powder and various amounts of Ga 2 O 3 , to investigate the effects of gallium doping and sputtering conditions on electrical properties. Optimizing the RF power density, argon gas pressure, and gallium content, transparent Ga‐doped ZnO films with resistivity less than 10 −3 Ω·cm were obtained. Electron concentrations for undoped and Ga‐doped ZnO films were on the order of 10 18 and 10 21 /cm 3 , respectively. The Ga‐doped ZnO films became degenerate when the electron concentration exceeded ∼ 10 19 /cm 3 , and the optical band gap increased with increasing carrier concentration because of the increase of Fermi energy in the conduction band.