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Defect Equilibria and Transport in YBa 2 Cu 3 O 7‐x at Elevated Temperatures: III, Defect Model and Conductivity Mechanism
Author(s) -
Ncworthy Janusz,
Rekas Mieczyslaw
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb05156.x
Subject(s) - seebeck coefficient , thermal conduction , electrical resistivity and conductivity , condensed matter physics , conductivity , partial pressure , charge carrier , materials science , oxygen , conduction electron , electron , lattice (music) , charge (physics) , thermoelectric effect , oxide , chemistry , thermodynamics , physics , organic chemistry , quantum mechanics , acoustics , metallurgy
Based on the measurements of electrical conductivity and thermopower (Seebeck coefficient) as a function of oxygen partial pressure, the defect structure and corresponding conduction mechanisms at elevated temperatures are considered for the Y‐Ba‐Cu‐O (1:2:3) system. It has been postulated that the simple hopping model is not applicable to YBa 2 Cu 3 O 7‐x . A modified conduction hopping mechanism has been proposed and equations describing the mobility of charge carriers in the studied system are derived. The most important advantage of the present model, in comparison to previous models, involves considering interactions between both electrons and electron holes and the resulting effect on their mobility terms. The observed departure of experimental data from the Heikes formula is explained by a very high concentration of defects and resulting substantial interactions between the defects which must be taken into account. The proposed transport model exhibits good agreement with experimental data of nonstoichiometry and the presently determined electrical conductivity and thermopower. It has been argued that the charge transfer mechanism depends substantially on the oxygen partial pressure and resulting oxygen content in the oxide lattice.