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Grain Boundaries in Silicon from Zero Temperature through Melting
Author(s) -
Phillpot Simon R.,
Wolf Dieter
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb05139.x
Subject(s) - grain boundary , silicon , twist , materials science , zero (linguistics) , covalent bond , melting temperature , zero temperature , condensed matter physics , melting point , boundary (topology) , zero point energy , thermodynamics , chemical physics , crystallography , metallurgy , chemistry , physics , microstructure , geometry , composite material , quantum mechanics , mathematical analysis , linguistics , mathematics , philosophy , organic chemistry
The results of atomistic simulations of twist grain boundaries in covalent silicon are presented and compared with similar studies in metals. Three aspects are discussed in detail: (i) the zero‐temperature structure‐energy correlation, (ii) the elastic anomalies near a twist boundary at zero temperature, and (iii) the high‐temperature stability of a boundary and its role in thermodynamic melting. In each case striking similarities with studies on metals are found, which are attributed to the important role played by atoms in close proximity. By contrast the covalent nature of bonding in silicon appears to play only a minor role.