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Effects of Carbon as a Sintering Aid in Silicon Carbide
Author(s) -
Rijswijk W.,
Shanefield Daniel J.
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb05109.x
Subject(s) - sintering , silicon carbide , materials science , diffusion , carbon fibers , carbide , silicon , chemical engineering , metallurgy , composite material , composite number , thermodynamics , physics , engineering
Self‐diffusion data are collected from the literature in an attempt to better understand the strong effects of carbon as a sintering aid in SiC. These data indicate that the presence of excess carbon, in addition to reducing the native SiO 2 layer of the SiC, probably enhances the rate‐controling bulk self‐diffusion rate of SiC by a factor of about 100.