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High‐Temperature Oxidation of Chemically Vapor‐Deposited Silicon Carbide in Wet Oxygen at 1823 to 1923 K
Author(s) -
Narushima Takayuki,
Goto Takashi,
Iguchi Yasutaka,
Hirai Toshio
Publication year - 1990
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1990.tb04261.x
Subject(s) - atmospheric temperature range , cristobalite , partial pressure , thermogravimetric analysis , silicon carbide , oxygen , materials science , diffusion , oxide , analytical chemistry (journal) , kinetics , vapor pressure , water vapor , chemical vapor deposition , activation energy , vapour pressure of water , oxidation process , chemistry , chemical engineering , thermodynamics , metallurgy , nanotechnology , quartz , organic chemistry , physics , quantum mechanics , engineering
The oxidation of chemically vapor‐deposited SiC in wet O 2 (water vapor partial pressure = 0.01 MPa, total pressure = 0.1 MPa) was examined using a thermogravimetric technique in the temperature range of 1823 to 1923 K. The oxidation kinetics follow a linear‐parabolic relationship over the entire temperature range. The activation energies of linear and parabolic rate constants were 428 and 397 kJ · mol −1 , respectively. The results suggested that the rate‐controlling step is a chemical reaction at an SiC/SiO 2 interface in the linear oxidation regime, and the rate‐controlling step is an oxygen diffusion process through the oxide film (cristobalite) in the parabolic oxidation regime.