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Oxygen Self‐Diffusion in Magnesium‐ or Titanium‐Doped Alumina Single Crystals
Author(s) -
Haneda Hajime,
Monty Claude
Publication year - 1989
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1989.tb09699.x
Subject(s) - doping , oxygen , thermal diffusivity , diffusion , titanium , self diffusion , partial pressure , analytical chemistry (journal) , materials science , magnesium , atmospheric temperature range , vacancy defect , activation energy , mineralogy , inorganic chemistry , chemistry , thermodynamics , crystallography , metallurgy , physics , self service , optoelectronics , organic chemistry , business , chromatography , marketing
Oxygen Setf‐diffusion coefficients have been measured in single crystals of N 2 O 3 doped with Mg or Ti under an oxygen partial pressure of 20 kPa in the temperature range 1400° to 1700°C. Diffusion coefficients in Mg‐doped crystals obey the equation D o (cm 2 /s) = 1 × 10 11 ∼ (1×10 13 ) exp[−915 ± 50(kJ/mol)/ RT ]. The diffusivity of oxygen in Ti‐doped A1 2 O 3 is lower than Mg‐doped A1 2 O 3 . A vacancy mechanism explains these results.