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Oxidation of Chemically‐Vapor‐Deposited Silicon Nitride and Slnglem‐Crystal Silicon
Author(s) -
Choi Doo J.,
Fischbach David B.,
Scott William D.
Publication year - 1989
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1989.tb09693.x
Subject(s) - silicon nitride , silicon , nitride , locos , water vapor , materials science , activation energy , partial pressure , nitrogen , reaction rate constant , inert gas , chemical vapor deposition , vapour pressure of water , inorganic chemistry , analytical chemistry (journal) , oxygen , chemistry , kinetics , layer (electronics) , nanotechnology , metallurgy , organic chemistry , composite material , physics , quantum mechanics
Oxidation of {111} single‐crystal silicon and dense, chemically‐vapor‐deposited silicon nitride was done in clean silica tubes at temperatures of 1000° to woo°C. The oxidation rates of silicon nitride under various atmospheres (dry O 2 , wet O 2 , wet inert gas, and steam) were several orders of magnitude slower than those of silicon under the identical conditions. The activation energy for the oxidation of silicon nitride decreased from 330 to 259 kJ/mol in going from dry O 2 to steam while that for Si decreased from 120 to 94 kJ/mol. The parabolic rate constant for Si increased linearly as the water vapor pressure increased. However, the parabolic rate constant for silicon nitride showed nonlinear dependency on the water vapor pressure in the presence of oxygen. The oxidation kinetics of silicon nitride is explained by the formation of nitrogen compounds (NO and NH 3 ) at the reaction interface and the counterpermeation of these reaction products.