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Preparation of Gadolinium Gallium Garnet [Gd 3 Ga 5 O 12 ] by Solid‐State Reaction of the Oxides
Author(s) -
Hellstrom E. E.,
Ray R. D.,
Zhang C.
Publication year - 1989
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1989.tb07656.x
Subject(s) - gadolinium gallium garnet , gadolinium , gallium , materials science , indentation hardness , crystallite , solid state , mineralogy , analytical chemistry (journal) , metallurgy , microstructure , composite material , chemistry , epitaxy , layer (electronics) , chromatography
We have prepared dense polycrystalline gadolinium gallium garnet (GGG) by solid‐state reaction of the oxides. The oxides were prereacted at 1350°C, ground, pressed, and sintered at 1650°C, yielding 97% dense samples. Ga 2 O 3 evaporated from the sample surface leaving Gd 4 Ga 2 O 9 that could spall off the sample. For the short times needed to sinter samples, the bulk composition of the material remained essentially constant. The microhardness of the GGG was 11.8 ± 1.2 GN · m −2 .