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Carbon Inclusions in Sintered Silicon Carbide
Author(s) -
Hamminger Rainer
Publication year - 1989
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1989.tb06317.x
Subject(s) - materials science , sintering , auger electron spectroscopy , microstructure , carbon fibers , silicon carbide , carbide , stoichiometry , transmission electron microscopy , metallurgy , scanning electron microscope , silicon , mineralogy , composite material , composite number , nanotechnology , chemistry , physics , nuclear physics , organic chemistry
The carbon additions in the pressureless sintering of SiC are commonly used for the removal of SiO 2 layers on the starting powders. In practice, it is common to add more C than is necessary for stoichiometric removal to ensure a complete deoxidation. As a result, inclusions of excess free C are a general feature of the microstructure of sintered SiC. This phenomenon was studied by high‐resolution Auger electron spectroscopy on ultra‐high‐vacuum‐exposed fracture surfaces as well as by high‐resolution transmission electron microscopy of B‐ and C‐doped materials.