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Elevated‐Temperature Fracture Resistance of a Sintered α‐Silicon Carbide
Author(s) -
Ghosh Asish,
Jenkins Michael G.,
White Kenneth W.,
Kobayashi Albert S.,
Brad Richard C.
Publication year - 1989
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1989.tb06108.x
Subject(s) - fracture toughness , materials science , silicon carbide , indentation , composite material , flexural strength , bending , fracture (geology) , indentation hardness , atmospheric temperature range , three point flexural test , microstructure , physics , meteorology
The fracture toughness of a dense, sintered commercial α‐silicon carbide was determined for temperatures from 20° to 1400°C using both straight‐ and chevron‐notched test specimens and also controlled‐surface‐microflaw specimens, all in three‐point bending. The flexural strengths were also measured for the same range of temperatures and the trend is compared with that of the toughness. Measurements from this study are discussed and also compared with other results in the literature. Analysis reveals the importance of contrasting sharp crack and blunt crack techniques and also the need for addressing the microhardness indentation method separately. It is concluded that the fracture toughness of this silicon carbide is about 3 MPa · m½ and that the crack growth resistance is characterized by a flat R ‐curve behavior, both of which are independent of temperature from 20° to 1400°C.