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Defect Chemistry of Relaxor Ferroelectrics and the Implications for Dielectric Degradation
Author(s) -
Smyth Donald M.,
Harmer Martin P.,
Peng Ping
Publication year - 1989
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1989.tb06073.x
Subject(s) - dielectric , materials science , perovskite (structure) , degradation (telecommunications) , ionic bonding , oxygen , vacancy defect , capacitor , chemical physics , condensed matter physics , chemical engineering , voltage , chemistry , ion , crystallography , electronic engineering , optoelectronics , electrical engineering , physics , organic chemistry , engineering
Degradation of the electrical resistance of perovskite‐related dielectrics under voltage–temperature stress is a function of the concentration of the most mobile ionic species, the oxygen vacancy. Sources of oxygen vacancies in simple perovskite oxides are reviewed, and the effects of the compositional complexity of the relaxor ferroelectrics are discussed. In particular, the possibility of compositional inhomogeneity that results from partial ordering of the cations on the octa hedral sites can greatly affect the properties of the continuous, disordered matrix that controls the degradation behavior. [Key words: ferroelectrics, electrical properties, defects, capacitors, perovskites.]