Premium
Characterization of Gold—Aluminum Nitride and Gold—Silicon Carbide Interfaces
Author(s) -
Zdaniewski Wieslaw A.,
Houser Cheryl A.
Publication year - 1989
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1989.tb06035.x
Subject(s) - materials science , silicon carbide , x ray photoelectron spectroscopy , secondary ion mass spectrometry , nitride , aluminium , diffusion , ceramic , silicon nitride , carbide , impurity , metallurgy , silicon , chemical engineering , characterization (materials science) , analytical chemistry (journal) , inorganic chemistry , ion , nanotechnology , chemistry , layer (electronics) , physics , organic chemistry , chromatography , engineering , thermodynamics
Aluminum nitride and silicon carbide substrates were screen‐printed with fritless gold and fired at 850°C in air. Interfacial diffusion zones up to 7 αm thick were observed, in which the concentrations of Au, Na impurities, and combined O varied together. Secondary ion mass and photoelectron spectroscopy revealed oxidized Al in the gold conductor supported by AIN. It is suggested that enhanced oxidation accompanies the diffusion of Au into the ceramics.