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Grain‐Boundary Phase Crystallization of Silicon Nitride with Material Loss During Heat Treatment
Author(s) -
Tsuge Akihiko,
Inoue Hiroshi,
Komeya Katsutoshi
Publication year - 1989
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1989.tb06023.x
Subject(s) - crystallization , materials science , silicon nitride , solubility , volatilisation , phase (matter) , analytical chemistry (journal) , phase diagram , nitride , mineralogy , chemical engineering , silicon , chemistry , composite material , metallurgy , chromatography , organic chemistry , layer (electronics) , engineering
An analysis was made of the Si 3 N 4 · Y 2 O 3 crystallization process from a compacted Si 3 N 4 powder (composition: 5 wt% Y 2 O 3 and 2 wt% Al 2 O 3 ) during heat treatment in various powder beds. X‐ray diffraction was used to measure the degree of cyrstallization, which was correlated with weight loss. Crystallization and weight loss were affected significantly by the SiO 2 content in the packing powder. Crystallization correlated strongly with the weight loss. The dominant loss was attributed to SiO volatilization from the Y‐Si‐Al‐O‐N liquid. The crystallization mechanism with the loss of material was interpreted using a solubility—supersolubility diagram at constant temperature.