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High‐Resolution Electron Microscopy Observations of Stacking Faults in β‐SiC
Author(s) -
Koumoto Kunihito,
Takeda Shunji,
Pai Chul Hoon,
Sato Takayori,
Yanagida Hiroaki
Publication year - 1989
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1989.tb06014.x
Subject(s) - stacking , electron microscope , materials science , resolution (logic) , stacking fault , transmission electron microscopy , crystallography , microscopy , high resolution , nanotechnology , chemistry , optics , geology , physics , computer science , remote sensing , organic chemistry , artificial intelligence
Structural images of the stacking faults in β‐SiC were obtained with a high‐resolution electron microscope. Stacking faults initially present in β‐SiC powder particles were eliminated as grain growth proceeded at elevated temperatures.