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Characterization of Silicon Carbide Whiskers
Author(s) -
Karasek Keith R.,
Bradley Steven A.,
Donner Jeffry T.,
Yeh Harry C.,
Schienle James L.,
Fang Ho T.
Publication year - 1989
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1989.tb05999.x
Subject(s) - whiskers , scanning electron microscope , silicon carbide , materials science , x ray photoelectron spectroscopy , oxide , transmission electron microscopy , impurity , monocrystalline whisker , whisker , characterization (materials science) , chemical engineering , carbide , mineralogy , analytical chemistry (journal) , nanotechnology , composite material , chemistry , metallurgy , organic chemistry , chromatography , engineering
SiC whiskers from six manufacturers were characterized by bulk chemical techniques, X‐ray photoelectron spectroscopy, X‐ray diffraction, and scanning transmission electron microscopy or scanning electron microscopy. Major component (C, Si, and O) surface chemistries of the whiskers fell into four general categories: high oxygen content with oxide resembling a SiO 2 , high oxygen content with oxide resembling a Si‐O‐C glass, and hydrocarbon. Several whiskers exhibited significant surface impurities—in particular, Fe. From a morphological viewpoint, significant differences in diameter, debris level, straightness, and types and quantities of defects were observed from one manufacturer to another.