Premium
Thermodynamic and Experimental Study of High‐Purity Aluminum Nitride Formation from Aluminum Chloride by Chemical Vapor Deposition
Author(s) -
Nickel Klaus G.,
Riedel Ralf,
Petzow Günter
Publication year - 1989
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1989.tb05982.x
Subject(s) - chemical vapor deposition , amorphous solid , nitride , aluminium , dissociation (chemistry) , inorganic chemistry , materials science , chemistry , chemical engineering , metallurgy , crystallography , nanotechnology , layer (electronics) , engineering
Thermodynamic calculations in the systems Al‐Cl, Al‐Cl‐N, and H‐Al‐Cl‐N were used to assess the capabilities of AlCl 3 or mixtures of AlCl 3 with Al to produce AlN by chemical vapor deposition (CVD) techniques. Direct nitridation (N 2 as reaction agent) is possible only at high temperatures (≥1500 K), using AlCl 3 –Al mixtures. Reaction with NH 3 at equilibrium gives low yields but the suppression of NH 3 dissociation yields near 100%, which makes the method suitable for powder production, coating, and single‐crystal growth. AlN with less than 1 wt% oxygen was obtained from technical grade AlCl 3 by this process. The formation of both amorphous AlN powder and crystalline AlN coatings was observed. It is assumed that the formation of AlCl 3 · x NH 3 adducts by mixing of Al‐Cl vapor and NH 3 at temperatures ≤1273 K prevents NH 3 dissociation and favors the production of amorphous AlN.