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Influence of Sintering Temperature on Intrinsic Trapping in Zinc Oxide‐Based Varistors
Author(s) -
SLETSON LISA C.,
POTTER MIKE E.,
ALIM MOHAMMAD A.
Publication year - 1988
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1988.tb07557.x
Subject(s) - varistor , materials science , trapping , sintering , relaxation (psychology) , conductance , capacitance , oxide , atmospheric temperature range , time constant , composite material , degree (music) , analytical chemistry (journal) , condensed matter physics , thermodynamics , chemistry , metallurgy , electrical engineering , electrode , voltage , psychology , ecology , social psychology , physics , chromatography , acoustics , biology , engineering
The ac electrical data of the ZnO‐Bi 2 O 3 varistor system, in the frequency range 5 Hz to 13 MHz, when analyzed in the complex capacitance ( C *) plane, yields a distinct depressed semicircular relaxation having an average time constant on the order of 10 −6 s. This trapping is attributed to the possible formation of ionized intrinsic/native defects. The decrease in the depression angle and average relaxation time, monitored as a function of the increasing sintering temperature (≥1100°C), indicated an improvement in the degree of uniformity in the loss‐conductance and rapidity of response of the intrinsic trapping. The dependence of the ac parameters related to this trapping response obtained from the C * plane on the sintering temperature has been presented.