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Bistable Optical Information Storage Using Antiferroelectric‐Phase Lead Lanthanum Zirconate Titanate Ceramics
Author(s) -
LAND CECIL E.
Publication year - 1988
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1988.tb07556.x
Subject(s) - materials science , phase transition , ferroelectricity , titanate , lead zirconate titanate , phase (matter) , bistability , antiferroelectricity , photosensitivity , optoelectronics , zirconate , ceramic , condensed matter physics , dielectric , chemistry , composite material , physics , organic chemistry
A recently discovered photostorage effect in antiferroelectric‐phase (AFE‐phase) lead lanthanum zirconate titanate (PLZT) compositions appears to be particularly applicable to binary optical information storage. The basis for bistable optical information storage is that exposure to near‐UV or visible light shifts the electric field threshold of the phase transition between the field‐induced ferroelectric (FE) phase and the stable AFE phase in the direction of the initial AFE → FE phase transition. Properties of this photoactivated shift of the FE → AFE phase transition, including preliminary photosensitivity measurements and photostorage mechanisms, are presented. Photosensitivity enhancement by ion implantation is also discussed.