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Phase Relationships in the Silicon Carbide‐Aluminum Nitride System
Author(s) -
ZANGVIL AVIGDOR,
RUH ROBERT
Publication year - 1988
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1988.tb07541.x
Subject(s) - materials science , auger electron spectroscopy , solid solution , wurtzite crystal structure , spectroscopy , nitride , phase (matter) , spinodal decomposition , analytical chemistry (journal) , carbide , diffusion , crystallography , chemistry , zinc , thermodynamics , metallurgy , nanotechnology , physics , organic chemistry , layer (electronics) , quantum mechanics , chromatography , nuclear physics
Phase relationships in the SiC‐AlN system were determined by analytical electron microscopy of local equilibria among adjacent phases in hot‐pressed samples and in diffusion couples. At 2100° to 2300°C, a 4H–2H equilibrium exists, the 4H field extending from ∼2 mol% AlN to an upper limit of 11 to 14 mol% AlN. The wurtzite‐type 2H (δ) solid solution extends from an impurity‐sensitive lower limit of 17 to 24 mol% AlN up to 100 mol% AlN. Semiquantitative Auger electron spectroscopy and energy dispersive X‐ray spectroscopy ultrathin‐window detector measurements confirmed the assumption that the solid solutions have the general formula (SiC) 1‐x (AlN) x and belong to the SiC‐AlN pseudobinary system. The existence of a miscibility gap below 1950°C was confirmed, but its limits were not determined accurately. A faulted metastable cubic phase, β′, exists below ∼2000°C and contains up to ∼4 mol% AlN. The transformations into the stable a structures occur through diffusion‐controlled stacking rearrangements.