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Effect of Silicon Dioxide on the Thermal Diffusivity of Aluminum Nitride Ceramics
Author(s) -
Yagi Takeshi,
Ishizawa Nobuo,
Mizutani Nobuyasu,
Kato Masanori,
Tsuge Akihiko
Publication year - 1988
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1988.tb05934.x
Subject(s) - thermal diffusivity , ceramic , materials science , silicon nitride , sintering , nitride , composite material , silicon dioxide , aluminium , thermal conduction , porosity , atmospheric temperature range , thermal , laser flash analysis , mineralogy , thermodynamics , chemistry , physics , layer (electronics)
The thermal diffusivity of AlN ceramics was significantly decreased by the addition of SiO 2 . The AlN ceramics with 4 wt% SiO 2 could not be densified by pressureless sintering in the temperature range 1400° to 1800°C. The thermal diffusivity of these samples was very low because of their porous structure. The AlN ceramics containing 2, 4, and 8 wt% SiO 2 were densified by hot‐pressing and also had low thermal diffusivity. In these samples, the grains of the 27R polytype that resulted from the reaction between AlN and SiO 2 were dispersed, obstructing the conduction of heat. The relation between the amount of 27R polytype and the thermal diffusivity of the AlN ceramics was determined.