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Accumulation of Creep Damage in a Siliconized Silicon Carbide
Author(s) -
CARROLL DANIEL F.,
TRESSLER RICHARD E.
Publication year - 1988
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1988.tb05897.x
Subject(s) - creep , materials science , microstructure , silicon carbide , nucleation , silicon , carbide , stress (linguistics) , composite material , deformation (meteorology) , metallurgy , chemistry , linguistics , philosophy , organic chemistry
The accumulation of creep damage in a siliconized silicon carbide was investigated as a function of applied stress, creep strain, and microstructure. At 1100°C, creep damage was observed to accompany deformation in specimens tested to creep strains greater than 0.10%, under applied stresses greater than 137 MPa. At low creep strains, creep damage occurred in regions of the microstructure of high silicon carbide content. As deformation progressed, creep damage extended into regions of the microstructure of lower silicon carbide content. The area density and area fraction of cavities were found to increase linearly with creep strain. From these results, a threshold stress for the formation of creep damage was determined to be 132 MPa at 1100°C. It was suggested that the formation of creep damage was controlled by the heterogeneous nucleation of cavities at the silicon‐silicon carbide interface, with the aid of high localized stresses and iron impurities in the silicon phase.