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Compensation Effect in Semiconducting Barium Titanate
Author(s) -
Peng ChengJien,
Lu HongYang
Publication year - 1988
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1988.tb05780.x
Subject(s) - barium titanate , acceptor , doping , valence (chemistry) , impurity , dopant , materials science , stoichiometry , barium , electrical resistivity and conductivity , conductivity , barium fluoride , electroceramics , mineralogy , inorganic chemistry , analytical chemistry (journal) , chemistry , optoelectronics , dielectric , condensed matter physics , metallurgy , electrical engineering , fabrication , alternative medicine , pathology , engineering , microfabrication , nuclear physics , medicine , physics , organic chemistry , chromatography
Donor‐doped, stoichiometric BaTiO 3 sintered at 1350°C for 1 h exhibits a maximum room‐temperature conductivity at [La 3+ ]∼0.15 mol%. Elements of lower valence than Ba 2+ or Ti 4+ , when incorporated into semiconducting BaTiO 3 , are regarded as poisoning impurities, i.e., acceptors. They tend to increase the room‐temperature resistivity of the semiconducting BaTiO 3 . For insulating BaTiO 3 resulting from high Mg 2+ acceptor doping levels, the semiconductivity can be restored by introducing higher La 3+ donor‐dopant concentrations. This behavior is interpreted as a compensation effect based on the defect chemistry of the acceptor‐ and donor‐doped BaTiO 3 .